You have reached the quote request page for part number 9966-CCYH of Bae Systems Inc, we have in stock that is listed alongside the description Microcircuit Memory. If you would like to learn more about this NSN part and your purchasing options, please fill out and submit the Request the Quote (RFQ) page presented on this page. By offering us important details like your target price and expected fulfillment time frame, our team can best offer you a tailored solution for your consideration. As we have staff available at all times, responses to any submission will be offered within 15 minutes of our review.
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To make exploring our expansive inventory simple, we have chosen to list all offerings alongside as much information as we can for an ease of identification. For example, part number 9966-CCYH is specifically produced under CAGE Code K0656, denoting the specific Bae Systems Inc facility it traces back to. Furthermore, with the NSN 5962-01-331-6046, this item also belongs to FSC 5962 Microcircuits Electronic, further ensuring that you only purchase your exact needs. If you have any questions or concerns regarding our offerings or service, be sure to call or email us at your convenience. Otherwise, we look forward to serving you as your strategic sourcing partner for part number 9966-CCYH and more.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-331-6046 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013316046 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| M38510/20704BEA | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CBBL | FEATURES PROVIDED | BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
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